Test Wafers

tei Solutions offers 100mm, 150mm, 200mm, and 300mm blanket and pattern wafers for material and tool evaluation including:

  • Line and Space
  • Hole Pattern
  • Al Pad wafers
  • Cu Pad wafers
  • Others – Please contact us for special structures or materials. Customers can utilize their own mask set if the clean level is acceptable.

φ300mm Patterned Wafer Examples

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L/S=260/40nm, SiO Etch
Pitch=300nm(6.5:1)
AR=approx.4.5(Depth=190nm)
X-SEM

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L/S=45/45nm, Si Etch
Pitch=90nm(1:1)
AR=approx.11(Depth=500nm)
X-SEM

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TOP CD(Cu)=approx.80nm,
Low-k Etch
Pitch=160nm(1:1)
Depth=180nm
X-SEM

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Si L/S Etch
Si Substrate Etching
(Top)L/S=50nm/90nm, Pitch=140nm
​​​Depth=1000nm
X-SEM​​​​​

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Si Hole Etch
(Top)Hole=φ120nm​​
Depth=1200nm​​​​
X-SEM

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​​SiO2 L/S Etch
SiO film etching
(Top)L/S=180nm/120nm, Pitch=300nm
​Depth=2700nm
X-SEM​​​​​

φ300mm Blanket Wafer Examples

Classification Method Type or Film Tickness Range (nm)
SiO Thermal RTO 1〜5
Radical Ox 2〜11
Wet Ox (Batch) 4〜500
CVD P-SiO2 2〜500
LP-TEOS (Batch) 10〜700
P-TEOS 10〜2,000
HDP 30〜1,000
SiN CVD LP-SiN HCD (Batch) 2〜150
LP-SiN DCS (Batch) 2〜250
P-SiN 30〜2,000
Nitridation Nitridation RTN 1〜5
Gate-nitridation
High-K Nitridation
a-Si CVD a-Si (Batch) 10〜300
Poly-Si CVD Poly-Si (Batch) 20〜500
SiOC CVD P-SiOC (non-porous) 50〜800
P-SiOC (porous) 100〜800
SiCO CVD P-SiCO 10〜500
SiCN CVD P-SiCN 50〜200
W CVD CVD-W 50〜800
AlCu PVD AlCu Sputter 160〜1,200
Cu PVD Cu Sputter 15〜300
Plating Cu Plating 300〜50,000
TiN CVD (dense) CVD-TiN (dense) 5〜10
Ti, TiN CVD CVD-Ti/TiN Ti 1〜20
TiN 1〜50
Ti, TiN PVD Ti/TiN Sputter Ti 5〜20
TiN 5〜50
Ta, TaN PVD Ta/TaN Sputter Ta 8〜80
TaN 5〜50
Ni, TiN PVD Ni/TiN Sputter 5〜200
5〜130
Resist for Imm ArF Coater Only Resist Coat  
SOG Coater Only SOG Coat  
SOC Coater Only SOC Coat  
Resist for KrF Coater Only Resist Coat  

φ200mm – Patterned Wafer Examples

  • High Aspect ratio Si hole pattern, Hole size 200nm, AR=40.
  • Al Pattern, VIA size 800nm,
  • Al Pattern, 0.35micron
  • Deep Si hole, Hole size 10um minimum, depth 50um maximum

φ200mm – Blanket Wafer Examples

  • SiGe Epi on Si, Ge content maximum 20%

φ150nm – Patterned Wafer Example

  • Al Pattern, 0.5micron

φ100mm - Patterned Wafer Example

  • Al Pattern, 0.8micron