Technology Development

Developers seeking to innovate new technologies can utilize tei Solutions’ Technology Development service. Customers can pursue two programs: Custom Innovation and Open Innovation. Both programs provide the customer with the flexibility to develop technology while protecting IP.

Various technological developments

Customers can request a custom R&D project that utilizes tei Solutions’ Super Clean Room Facility and Engineers. Onsite office space can be provided if available.

Customers can pursue:
  • Novel Transistors
  • Novel Memory
  • Nano Pore
  • Superconducting Qubits
  • MEMS/Bio-MEMS
  • Photovoltaics
Open Innovation (Spring 2011)

Customers can participate in one of tei Solutions’ open R&D efforts. tei Solutions’ engineers work on a variety of internal R&D projects throughout the year. Customers have the ability to join any individual project to obtain learnings and process know-how. The Open Innovation program is scheduled to begin in 2011.

Nanogap formation & measurement example

Nano-Gap Electrode (example)

Nano-Gap Electrode (example)
Au/Cr Electrode (gap size = 10nm)
X-SEM

Nano-Probe Measurement (example)

Nano-Probe Measurement (example)

Examples of Microfluidic Channel Formation

Si pillar (example)

  • X-SEM
    X-SEM
  • TILT SEM
    TILT SEM
  • Si pillar
    Pitch = 140nm
    Diameter = φ70±5nm
    Depth = 500nm

TMAH & BHF Wet Etching Processing Services

We offer TMAH and BHF wet etch processing services for Si wafers from 4" to 12".
The Si etch rate for TMAH wet etching is approximately 20 μm/hour, with an in-plane uniformity of less than 10%.


Standard Theme Innovation

tei Solutions selects theme of technology development for project. Customers take part in project and share information.