Test Wafers

tei Solutions offers 100mm, 150mm, 200mm, and 300mm blanket and pattern wafers for material and tool evaluation including:

  • Nano Pore Pattern
  • Line and Space
  • Hole Pattern
  • Al Pad wafers
  • Cu Pad wafers
  • Others – Please contact us for special structures or materials. Customers can utilize their own mask set if the clean level is acceptable.

Nano Pore Pattern Examples

Pore Size:50nm

Pore Size:200nm

Pore Size:10μm

φ300mm Patterned Wafer Examples

testwefas-01

L/S=260/40nm, SiO Etch
Pitch=300nm(6.5:1)
AR=approx.4.5(Depth=190nm)
X-SEM

L/S=100/100nm, Si Etch
Pitch=200nm(1:1)
AR=approx.23(Depth=2300nm)
X-SEM

testwefas-01

TOP CD(Cu)=approx.80nm,
Low-k Etch
Pitch=160nm(1:1)
Depth=180nm
X-SEM

Si L/S Etch
Si Substrate Etching
(Top)L/S=150nm/150nm, Pitch=300nm
AR=approx.18(Depth=2770nm)
X-SEM​​​​​

Si Hole Etch
(Top)Hole=φ1000nm​​
Depth=10000nm​​​​
X-SEM

testwefas-01

​​SiO2 L/S Etch
SiO film etching
(Top)L/S=180nm/120nm, Pitch=300nm
​Depth=2700nm
X-SEM​​​​​

φ300mm Blanket Wafer Examples

Classification Materials Method Tickness (nm)
Diffusion SiO Thermal Oxide 1〜500
CVD SiO LP-TEOS 10〜300
P-TEOS 30〜2000
P-SiO2 20〜500
HDP 30〜1,000
SiN LP-Si3N4 10〜100
P-Si3N4 20〜1000
Si Poly-Si 20〜500
amorphous-Si 20〜500
Doped-Si 20〜500
SiOC P-SiOC 30〜400
SiCN P-SiCN 10〜200
AlO ALD-Al2O3 2〜10
HfO ALD-HfO2 2〜10
W CVD-W 50〜600
TiN CVD-TiN 5〜30
Ti CVD-Ti 2〜20
Sputter TiN PVD-TiN 5〜30
Ti PVD-Ti 2〜20
Al(Cu) PVD-Al(Cu) 100〜1000
TaN PVD-TaN 5〜50
Ta PVD-Ta 8〜80
Cu PVD-Cu 15〜200
Plating Cu Cu Plating 300〜5000
Coating Resist for ArF Contact Us
for KrF Contact Us
for i-Line Contact Us
BARC for KrF Contact Us
SOC for Imm-ArF Contact Us
SOG for Imm-ArF Contact Us
Should you require other types or thicknesses of film, please do not hesitate to contact us.

φ200mm – Patterned Wafer Examples

  • High Aspect ratio Si hole pattern, Hole size 200nm, AR=40.
  • Al Pattern, VIA size 800nm,
  • Al Pattern, 0.35micron
  • Deep Si hole, Hole size 10um minimum, depth 50um maximum

φ200mm – Blanket Wafer Examples

  • SiGe Epi on Si, Ge content maximum 20%

φ150nm – Patterned Wafer Example

  • Al Pattern, 0.5micron

φ100mm - Patterned Wafer Example

  • Al Pattern, 0.8micron